Description

Over the past 20 years, amorphous oxide semiconductors based on indium gallium zinc oxide (IGZO) and its derivatives have come into the spotlight as an excellent choice for the channel material in thin-film transistors (TFTs). This is due in large part to their unusually high mobility in the amorphous phase, as well as their low off-state leakage current. IGZO has been investigated for a wide variety of applications ranging from displays and flexible electronics to back-end-of-line (BEOL) devices and DRAM.

In this talk, I will present our recent work combining solution-processed indium oxide-based semiconductors with two novel photonic processing techniques to produce flexible thin-film transistors. First, I will introduce photonic curing, which is used to anneal thin films at high temperatures on substrates with a low therm...